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| Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 1.60.15 Unit: mm s Features q q 1.60.1 1.00.1 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 0.5 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.5 1 3 2 0.450.1 0.3 0.750.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 50 50 5 50 125 125 -55 ~ +125 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : AM s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 50 5 200 0.06 250 1.5 500 0.3 V MHz pF min typ max 0.1 100 Unit A A V V V *h FE Rank classification Rank hFE Marking Symbol Q 200 ~ 400 AMQ R 250 ~ 500 AMR 0 to 0.1 0.20.1 +0.1 1 Transistor PC -- Ta 150 120 Ta=25C 125 100 50 2SC4656 IC -- VCE 60 VCE=10V 25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 100 80 Collector current IC (mA) IB=300A 250A 40 Ta=75C 30 -25C 20 75 60 200A 150A 50 40 100A 20 50A 25 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 1 3 10 30 100 300 1000 25C -25C IC/IB=10 600 hFE -- IC 600 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C -25C 300 Transition frequency fT (MHz) 3 10 30 100 500 400 300 200 200 100 100 0 0.1 0.3 1 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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